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UPG110P

NEC
Part Number UPG110P
Manufacturer NEC
Description 2 to 8 GHz WIDE-BAND AMPLIFIER
Published Apr 16, 2005
Detailed Description DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs mono...
Datasheet PDF File UPG110P PDF File

UPG110P
UPG110P

Overview
DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz.
And the device is available in chip form.
The µPG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment.
FEATURES • Ultra wide band : 2 to 8 GHz • High Power Gain : GP = 15 dB TYP.
• Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP.
@f = 2 to 8 GHz ORDERING INFORMATION PART NUMBER FORM Chip µPG110P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VIN Pin Ptot*1 Topr*2 Tstg +10 –5 to +0.
6 +10 1.
5 –65 to +125 –65 to +125 V V dBm W °C °C *1 Mounted with AuSn hard solder *2 The temperature of base material beside the chip RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Supply Voltage Input Power VDD Pin +8 ± 0.
2 –5 V dBm Document No.
P11882EJ2V0DS00 (2nd edition) (Previous No.
ID-2454) Date Published September 1996 P Printed in Japan © 1989 µPG110P ELECTRICAL CHARACTERISTICS (TA = 25 °C)*3 CHARACTERISTIC Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD GP MIN.
65 12 TYP.
135 15 ± 1.
5 6 7 30 10 10 10 40 14 MAX.
180 UNIT mA dB dB dB dB dB dBm TEST CONDITIONS VDD = +8 V f = 2 to 8 GHz ∆G P RLin RLout ISL PO(1 dB) *3 These characteristics are based on performance of devices mounted in the standard package shown in Fig.
1.
Fig.
1 4 pin Ceramic Package Top View 4.
5 MAX.
0.
6 ± 0.
06 0.
4 ± 0.
06 4.
1 MIN.
0.
1 ± 0.
06 2 1.
48 MAX.
0.
7 +0.
2 –0.
1 4.
1 MIN.
4.
6 MAX.
µPG110P TYPICAL CHARACTERISTICS (TA = 25 °C)*4 POWER GAIN vs.
FREQUENCY VDD = +8 V IDD = 132 mA 30 GP - Power Gain - dB 20 10 0 0 1 2 3 4 5 6 7 8 9 10 f - Frequency - GHz INPUT RETURN LOSS vs.
FREQUENCY VDD = +8 V IDD = 132...


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