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UPG110B

NEC
Part Number UPG110B
Manufacturer NEC
Description 2-8 GHZ WIDE-BAND AMPLIFIER
Published Mar 9, 2007
Detailed Description www.DataSheet4U.com 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB a...
Datasheet PDF File UPG110B PDF File

UPG110B
UPG110B

Overview
www.
DataSheet4U.
com 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB) GAIN vs.
FREQUENCY AND TEMPERATURE 20 15 10 5 0 -5 -10 T = -25˚C T = +25˚C T = +75˚C RELIABILITY DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz.
The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required.
The UPG110 is available in a 4 pin flat package and in chip form.
0 2 4 6 8 10 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS1 (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.
0 to 8.
0 GHz) PART NUMBER PACKAGE OUTLINE SYMBOLS IDD GP ∆GL RLIN RLOUT ISOL P1dB IP3 Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Outpu...


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