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PA2423G

SiGe Semiconductor  Inc.
Part Number PA2423G
Manufacturer SiGe Semiconductor Inc.
Description 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Published Mar 22, 2005
Detailed Description PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongle...
Datasheet PDF File PA2423G PDF File

PA2423G
PA2423G


Overview
PA2423G 2.
4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Flip chip and chip-on-board applications Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.
4 GHz radio applications.
It delivers +22.
5 dBm output power with 47% poweradded efficiency – making it capable of overcoming insertion losses of up to 2.
5 dB between amplifier output and antenna input in tm Class 1 Bluetooth applications.
The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation.
An on-chip ramping circuit corrects the turn-on/off switching of amplifier output with less than 3 dB overshoot, meeting the Bluetoothtm specification 1.
1.
The PA2423G operates at 3.
3V DC.
At typical output power level (+22.
5 dBm), its...



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