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PA2423L

SiGe Semiconductor Inc.
Part Number PA2423L
Manufacturer SiGe Semiconductor Inc.
Description 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Published Mar 22, 2005
Detailed Description PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongl...
Datasheet PDF File PA2423L PDF File

PA2423L
PA2423L

Overview
PA2423L 2.
4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.
4 GHz radio applications.
It delivers +22.
5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.
5 dB between amplifier output and antenna input in tm class 1 Bluetooth applications.
The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation.
An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.
1.
The PA2423L operates at 3.
3V DC.
At typical output power level (+22.
5 dBm), its current consumption is 125 mA.
The silicon/silicon-germanium structure of the PA2423L – and its exposed-die-pad package, soldered to the system PCB – provide high thermal conductivity and a subsequently low junction temperature.
This device is capable of operating at a duty cycle of 100 percent.
Features +22.
5dBm at 45% Power Added Efficiency Low current 80mA typical @ Pout=+20 dBm Temperature stability better than 1dB Power-control and Power-down modes Single 3.
3 V Supply Operation Temperature rating: -40C to +85C Very small plastic package - 6 lead LPCC (1.
6mm x 3.
0mm) Ordering Information Type PA2423L Package 6 - LPCC Shipping Method Tape and reel Tubes -samples PA2423L-EV Evaluation kit Functional Block Diagram V CTL V CC0 V RAMP Bias Generator Ramp Circuitry IN Stage 1 Interstage Match Stage 2 OUT/ V CC2 GND V CC1 GND DOC# 05PDS002 Rev 4 07/26/2001 Page 1 of 11 PA2423L 2.
4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Pin Out Diagram TOP VIEW BOTTOM VIEW 1 2 3 SiGe 2423L 6 5 4 ...


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