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RN1001

Toshiba Semiconductor
Part Number RN1001
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Swi...
Datasheet PDF File RN1001 PDF File

RN1001
RN1001

Overview
RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2001~RN2006 Unit: mm Equivalent Circuit and Bias Resister Values Type No.
RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1001~1006 RN1001~1006 RN1001~1004 RN1005, 1006 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 100 400 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
21g Unit V V V mA mW °C °C TO-92 SC-43 2-5F1B 1 2001-06-07 RN1001~RN1006 Electrical Characteristics (Ta = 25°C) Characteristic Collec...


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