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RN1003

Toshiba Semiconductor
Part Number RN1003
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Swi...
Datasheet PDF File RN1003 PDF File

RN1003
RN1003

Overview
RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2001~RN2006 Unit: mm Equivalent Circuit and Bias Resister Values Type No.
RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1001~1006 RN1001~1006 RN1001~1004 RN1005, 1006 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 100 400 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
21g Unit V V V mA mW °C °C TO-92 SC-43 2-5F1B 1 2001-06-07 RN1001~RN1006 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1001~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 DC current gain RN1003 RN1004 RN1005 RN1006 Collector-emitter saturation voltage RN1001~1006 RN1001 RN1002 Input voltage (ON) RN1003 RN1004 RN1005 RN1006 Input voltage (OFF) Transition frequency Collector Output capacitance RN1001~1004 RN1005, 1006 RN1001~1006 RN1001~1006 RN1001 RN1002 Input resistor RN1003 RN1004 RN1005 RN1006 RN1001~1004 Resistor ratio RN1005 RN1006 R1/R2 ― R1 ― VI (OFF) fT Cob ― ― ― VCE = 5V, IC = 0.
1mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VI (ON) ― VCE = 0.
2V, IC = 5mA VCE (sat) ― IC = 5mA, IB = 0.
25mA hFE ― VCE = 5V, IC = 10mA IEBO ― VEB = 10V, IC = 0 Symbol ICBO ICEO Test Circuit ― Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 Min Typ.
Max 100 500 1.
52 0.
71 0.
33 0.
15 0.
145 0.
138 mA Unit nA ― ― 0.
82 0.
38 0.
17 0.
082 ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.
1 VEB = 5V, IC = 0 0.
078 0.
074 30 50 70 80 80 80 ― 1.
1 1.
2 1.
3 1.
5 0.
6 0.
7 1.
0 0.
5 ―...


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