DatasheetsPDF.com

RN1506

Toshiba Semiconductor
Part Number RN1506
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1501~RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Uni...
Datasheet PDF File RN1506 PDF File

RN1506
RN1506

Overview
RN1501~RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2501~RN2506 Equivalent Circuit and Bias Resister Values Type No.
RN1501 RN1502 RN1503 RN1504 RN1505 RN1506 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 6.
8mg ― ― 2-3L1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1501~1506 RN1501~1506 RN1501~1504 RN1505, 1506 Symbol VCBO VCEO VEBO IC PC * Tj Tstg Rating 50 50 10 5 100 300 150 −55~150 Unit V V V mA mW °C °C * Total rating 1 2001-06-07 RN1501~RN1506 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN1501~1506 RN1501 RN1502 Emitter cut-off current RN1503 RN1504 RN1505 RN1506 RN1501 RN1502 DC current gain RN1503 RN1504 RN1505 RN1506 Collector-emitter saturation voltage RN1501~1506 RN1501 RN1502 Input voltage (ON) RN1503 RN1504 RN1505 RN1506 Input voltage (OFF) Transition frequency Collector Output capacitance RN1501~1504 RN1505, 1506 RN1501~1506 RN1501~1506 RN1501 RN1502 Input resistor RN1503 RN1504 RN1505 RN1506 RN1501~1504 Resistor ratio RN1505 RN1506 R1/R2 ― R1 ― VI (OFF) fT Cob ― ― ― VCE = 5V, IC = 0.
1mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VI (ON) ― VCE = 0.
2V, IC = 5mA VCE (sat) ― IC = 5mA, IB = 0.
25mA hFE ― VCE = 5V, IC = 10mA IEBO ― VEB = 10V, IC = 0 Symbol ICBO ICEO Test Circuit ― Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 Min ― ― 0.
82 0.
38 0.
17 0.
082 VEB = 5V, IC = 0 0.
078 0.
074 30 50 70 80 80 80 ― 1.
1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)