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RN152G

Rohm
Part Number RN152G
Manufacturer Rohm
Description PIN diode
Published Feb 17, 2007
Detailed Description www.DataSheet4U.com RN152G Diodes PIN diode (Silicon Epitaxial Planer) RN152G z Applications High frequency switching ...
Datasheet PDF File RN152G PDF File

RN152G
RN152G

Overview
www.
DataSheet4U.
com RN152G Diodes PIN diode (Silicon Epitaxial Planer) RN152G z Applications High frequency switching z External dimensions (Unit : mm) 0.
6±0.
05 0.
13±0.
03 z Land size figure (Unit : mm) 0.
5 1.
0±0.
05 1.
4±0.
05 z Features 1) Ultra small mold type.
(VMD2) 2) High frequency resistance which is small and low capacity.
0.
5 VMD2 z Construction Silicon epitaxial planar z Structure 0.
27±0.
03 0.
5±0.
05 ROHM : VMD2 dot (year week factory) z Taping dimensions (Unit : mm) 4±0.
1 2±0.
05 φ1.
5+0.
1 　　　　　0 1.
75±0.
1 0.
18±0.
05 3.
5±0.
05 1.
11±0.
05 2.
1±0.
1 φ0.
5 0.
76±0.
1 4±0.
1 2±0.
05 0.
4 8.
0±0.
3 0.
1 1.
2 0.
3 0.
65±0.
05 z Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage VR Forward current IF Junction temperature Tj Storage temperature Tstg Operation temperature Topor z Electrical characteristic (Ta=25°C) Parameter Symbol Forward voltage VF Reverse current IR Limits 30 100 150 -55 to +150 -55 to +150 Unit V mA ℃ ℃ ℃ Min.
0.
15 - Typ.
- Max.
1 0.
1 0.
45 4.
8 1.
8 Unit V µA pF Ω Ω Conditions IF=10mA VR=30V VR=1V , f=1MHz IF=1mA,f=100MHz IF=10mA,f=100MHz Capacitance between terminals Forward frequency resistance Ct Rf Rev.
B 1/2 RN152G Diodes z Electrical characteristic curves 100 Ta=150℃ 10000 Ta=150℃ 1000 Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) Ta=125℃ 10 100 Ta=75℃ 10 1 0.
1 0.
01 0.
001 Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=75℃ Ta=25℃ 1 1 Ta=-25℃ 0.
1 0.
1 0 100 200 300 400 500 600 700 800 900 100 110 120 0 0 0 0.
01 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 100 f=1MHz 10 f=10MHz 1 860 FORWARD VOLTAGE:VF(mV) Ta=25℃ VR=0V CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD OPERATING RESISTANCE:rf(Ω) 850 840 830 820 AVE:832.
7mV Ta=25℃ IF=10mA n=30pcs f=100MHz 1 0.
1 0.
1 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 0.
1 1 10 100 FREQUENCY(MHz) Ct-f CHARACTERISTICS...


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