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RN1707

Toshiba Semiconductor
Part Number RN1707
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1707,RN1708,RN1709 Switching, Inverter Circ...
Datasheet PDF File RN1707 PDF File

RN1707
RN1707

Overview
RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1707,RN1708,RN1709 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in USV (ultra super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2707~RN2709 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN1707 RN1708 RN1709 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 0.
014g ― ― 2-2L1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage RN1707~1709 RN1707 Emitter-base voltage RN1708 RN1709 Collector current Collector power dissipation Junction temperature Storage temperature range RN1707~1709 Ic Pc* Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 200 150 −55~150 mA mW °C °C V Unit V V *: Total rating 1 2001-06-07 RN1707~RN1709 El...


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