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RN1707JE

Toshiba Semiconductor
Part Number RN1707JE
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN170...
Datasheet PDF File RN1707JE PDF File

RN1707JE
RN1707JE

Overview
RN1707JE~RN1709JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1707JE,RN1708JE,RN1709JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
· · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
· · Wide range of resistor values are available to use in various circuit designs.
Complementary to RN2707JE~2709JE Unit: mm Equivalent Circuit and Bias Resistor Values C R1 (kW) 10 22 47 R2 (kW) 47 47 22 Type No.
RN1707JE RN1708JE B R1 R2 JEDEC JEITA TOSHIBA Weight: g (typ.
) ― ― ― RN1709JE E Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN1707JE~ 1709JE RN1707JE Emitter-base voltage RN1708JE RN1709JE Collector current Collector power dissipation RN1707J...


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