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RN2203

Toshiba Semiconductor
Part Number RN2203
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Apr 16, 2005
Detailed Description RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Swi...
Datasheet PDF File RN2203 PDF File

RN2203
RN2203

Overview
RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1201~RN1206 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN2201 RN2202 RN2203 RN2204 RN2205 RN2206 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2201~2206 RN2201~2206 RN2201~2204 RN2205, 2206 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 300 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
13g Unit V V V mA mW °C °C ― ― 2-4E1A 1 2001-06-07 RN2201~RN2206 Electrical Characteristics (Ta = 25°C) Characteristic Collector ...


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