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RN2210

Part Number	RN2210
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Apr 16, 2005
Detailed Description	RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2210,RN2211 Switching, Inverter Circuit, In...
Datasheet	RN2210 PDF File

Overview

RN2210,RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2210,RN2211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1210, 1211 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −100 300 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.
13g ― ― 2-4E1A 1 200...

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