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RFP30P05

Intersil Corporation
Part Number RFP30P05
Manufacturer Intersil Corporation
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Th...
Datasheet PDF File RFP30P05 PDF File

RFP30P05
RFP30P05

Overview
RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.
4 30A, 50V, 0.
065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09834.
Features • 30A, 50V • rDS(ON) = 0.
065Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG30P05 RFP30P05 RF1S30P05SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P05 RFP30P05 F1S30P05 Symbol D G NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.
e.
, RF1S30P05SM9A.
S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-126 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG30P05, RFP30P05, RF1S30P05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG30P05, RFP30P05 RF1S30P05SM -50 -50 ±20 30 Refer to Peak Current Curve 120 0.
8 Refer to UIS Curve -55 to 175 300 260 UNITS V V V A W W/oC oC oC oC Drain to Source Voltage (Note 1) .
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VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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