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RFP30P06

Intersil Corporation
Part Number RFP30P06
Manufacturer Intersil Corporation
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Th...
Datasheet PDF File RFP30P06 PDF File

RFP30P06
RFP30P06

Overview
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.
3 30A, 60V, 0.
065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09834.
Features • 30A, 60V • rDS(ON) = 0.
065Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG30P06 RFP30P06 RF1S30P06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P06 RFP30P06 Symbol D G F1S30P06 S NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.
e.
RF1S30P06SM9A.
Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-133 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG30P06, RFP30P06, RF1S30P06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG30P06, RFP30P06 RF1S30P06SM -60 -60 ±20 30 Refer to Peak Current Curve Refer to UIS Curve 135 0.
9 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) .
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VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Gate to Sourc...


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