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RA13H4047M-01

Mitsubishi Electric Semiconductor
Part Number RA13H4047M-01
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M BLOCK DIAGRAM 2 3 4...
Datasheet PDF File RA13H4047M-01 PDF File

RA13H4047M-01
RA13H4047M-01

Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M BLOCK DIAGRAM 2 3 400-470MHz 13W 12.
5V, 2 Stage Amp.
For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain current increases subst...


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