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QEB421

Fairchild Semiconductor
Part Number QEB421
Manufacturer Fairchild Semiconductor
Description SURFACE MOUNT INFRARED
Published Apr 16, 2005
Detailed Description QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0....
Datasheet PDF File QEB421 PDF File

QEB421
QEB421

Overview
QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.
118 (3.
0) 0.
102 (2.
6) 0.
091 (2.
3) 0.
083 (2.
1) 0.
083 (2.
1) 0.
067 (1.
7) 0.
041 (0.
1) 0.
035 (0.
9) 0.
028 (0.
7) 0.
134 (3.
4) 0.
118 (3.
0) 0.
094 (2.
4) FEATURES 0.
043 (1.
1) 0.
020 (0.
5) SCHEMATIC • Wavelength = 880 nm, AlGaAs • Wide Emission Angle, 120° ANODE CATHODE ANODE 0.
024 (0.
6) 0.
016 (0.
4) 0.
007 (.
18) 0.
005 (.
12) • Surface Mount PLCC-2 Package • High Power NOTES: 1.
Dimensions are in inches (mm) 2.
Tolerance of ± .
010 (.
25) on all non nominal dimensions unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature Reverse Voltage Peak Forward Current(4) Power Dissipation(1) (Flow)(2,3) Continuous Forward Current (TA = 25°C unless otherwise specified) Symbol Topr Tstg Tsol IF VR IFM PD Rating -55 to +100 -55 to +100 260 for 10 sec 100 5 1.
75 180 Unit °C °C °C mA V A mW NOTES 1.
Derate power dissipation linearly 2.
4 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
Pulse conditions; tp = 100 µs, T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) MIN.
TYP.
MAX.
UNITS SYMBOL Peak Emission Wavelength Spectral Bandwidth Emission Angle Forward Voltage Reverse Current Radiant Intensity Radiant Flux Temp.
Coeff.
of IE Temp.
Coeff.
of VF Temp.
Coeff.
of D Rise Time Fall Time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs VR = 5 V IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA DP D 0 VF IR Ie >e TCI TCV TCD tr tf — — — — — — 4 — — — — — — — 880 80 120 1.
5 3.
0 — — 48 10 -0.
5 -4 0.
25 — — — — — 1.
8 3.
8 1 8 — — — — — 1 1 nm nm Deg.
V µA mW/sr mW %/K mV/K nm/K µs µs  2001 Fairchild Semiconductor Corporation DS300385 2/26/01 1 OF 3 www.
fairchildsemi.
com QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE TYPICAL PERFO...


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