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QEB441

Fairchild Semiconductor
Part Number QEB441
Manufacturer Fairchild Semiconductor
Description SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
Published Apr 16, 2005
Detailed Description SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441 PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) ....
Datasheet PDF File QEB441 PDF File

QEB441
QEB441



Overview
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441 PACKAGE DIMENSIONS 0.
118 (3.
0) 0.
102 (2.
6) 0.
083 (2.
1) 0.
067 (1.
7) .
041 (0.
1) 0.
035 (0.
9) 0.
028 (0.
7) 0.
091 (2.
3) 0.
083 (2.
1) 0.
134 (3.
4) 0.
118 (3.
0) 0.
094 (2.
4) 0.
043 (1.
1) 0.
020 (0.
5) ANODE 0.
024 (0.
6) 0.
016 (0.
4) 0.
007 (.
18) 0.
005 (.
12) SCHEMATIC NOTES: 1.
Dimensions are in inches (millimeters) 2.
Tolerance of ± .
010 (.
25) on all non nominal dimensions unless otherwise specified.
ANODE CATHODE DESCRIPTION The QEB441 is a 730 nm AlGaAs LED encapsulated in a PLCC-2 package.
FEATURES • D= 730 nm • Chip Material: AlGaAs double heterojunction • Surface Mount PLCC-2 package • Wide Emission Angle, 120° • High Power • Tape and Reel option: .
TR  2001 Fairchild Semiconductor Corporation DS300196 5/14/01 1 OF 4 www.
fairchildsemi.
com SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow)(2,3) Continuous Forward Current Peak Forward Current(4) Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL IF IFP VR PD Rating -55 to +100 -55 to +100 260 for 10 sec 100 1 5 180 Unit °C °C °C mA A V mW NOTES 1.
Derate power dissipation linearly TBD mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
Pulse conditions: tp = 100 µs, T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) SYMBOL MIN.
TYP.
MAX.
UNITS IF = 10 mA, tp = 20 ms Forward Voltage IF = 100 mA, tp = 20 ms IF = 500 mA, tp = 1 ms IF = 1A, tp = 100 µs Emission Angle Reverse Leakage Current Peak Emission Wavelength Spectral Bandwidth IF = 100 mA VR = 5 V IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms Radiant Intensity IF = 500 mA, tp = 1 ms IF = 1 A, tp = 100 µs Response Time IF = 10 mA, tp = 100 µs, T = 10 ms tr, tf Ie 201/2 IR DP D VF — — — — — — 710 — 2 9 16 — — 2.
1 3.
9 5.
5 120 — 730 25 3 14 24 — 2.
0 — 4.
5 — ...



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