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QS6U24

Rohm
Part Number QS6U24
Manufacturer Rohm
Description Small switching Transistors
Published Apr 16, 2005
Detailed Description QS6U24 Transistor Small switching (−30V, −1A) QS6U24 !Features 1) The QS6U24 conbines Pch Treueh MOSFET with a Schottky...
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QS6U24
QS6U24


Overview
QS6U24 Transistor Small switching (−30V, −1A) QS6U24 !Features 1) The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive (4V).
4) The independently connected Schottky barrier diode have a low forward voltage.
!External dimensions (Units : mm) TSMT6 1pin mark 2.
8 1.
6 (1) (6) (4) (5) 0.
4 (1)Anode (2)Source (3)Gate (4)Drain (5)N/C (6)Cathode 0.
16 (3) (2) Each lead has same dimensions Abbreviated symbol : U24 !Applications load switch, DC/DC conversion !Equivalent circuit !Structure Silicon P-channel MOS FET Schottky Barrier DIODE (6) (5) (4) ∗2 !Packaging specifications Package Type QS6U24 Code Basic ordering unit (pieces) Taping TR 3000 (1) ∗1 ESD protection diode ∗2 Body diode (2) ∗1 (3) (1)Anode (2)Source (3)Gate (4)Drain (5)N/C (6)Cathode ∗ A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use.
Use the protection circuit when rated voltages are exceeded.
!Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch Symbol VRM VR IF IFSM Tj Symbol PD Tstg Limits −30 ±20 ±1.
0 ±2.
0 −0.
3 −1.
2 150 Limits 25 20 0.
7 3.
0 125 Limits 1.
0 −40~+125 Unit V V A A ∗1 A A ∗1 °C Unit V V A A ∗2 °C Unit W/Total ∗3 °C Channel temperature Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Parameter Total power dissipatino Range of strage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc.
∗3 Total mounted on a ceramic board 0.
85 2.
9 1/3 QS6U24 Transistor !Electrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
− − − − 300 500 600 − 90 25 16 9 7 18 7 1.
7 0.
6 0.
4 Max.
...



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