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QS6U22

Rohm
Part Number QS6U22
Manufacturer Rohm
Description 2.5V Drive Pch+SBD MOSFET
Published Nov 5, 2015
Detailed Description QS6U22   2.5V Drive Pch+SBD MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD -20V 215mΩ ±1.5A 1.25W lOutline TSMT6      ...
Datasheet PDF File QS6U22 PDF File

QS6U22
QS6U22


Overview
QS6U22   2.
5V Drive Pch+SBD MOSFET    Datasheet VDSS RDS(on)(Max.
) ID PD -20V 215mΩ ±1.
5A 1.
25W lOutline TSMT6                                lFeatures 1) The QS6U22 combines Pch MOSFET with a   Schottky barrier diode in a single TSMT6   package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.
5V drive).
4) Built-in Low VF schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR lAbsolute maximum ratings (Ta = 25°C) Marking U22 Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Gate - Source voltage VGSS ±12 V Continuous drain current ID ±1.
5 A Pulsed drain current ID, *1 pulse ±6.
0 A Continuous source current (body diode) IS -0.
75 A Pulsed source current (body diode) IS, *1 pulse -6.
0 A Power dissipation PD*3 0.
9 W/element Junction temperature Tj 150 ℃                                                                                                 www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/10 20150730 - Rev.
001     QS6U22            lAbsolute maximum ratings (Ta = 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature                 Datasheet Symbol VRM VR IF IFSM*2 PD*3 Tj Value 25 20 0.
7 3.
0 0.
7 150 Unit V V A A W/element ℃ Parameter Power dissipation Range of storage temperature Symbol PD*3 Tstg Value 1.
25 -55 to +150 Unit W/total ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Zero gate voltage drain current Gate threshold voltage Static drain - source on - state resistance Forward Transfer Admittance ...



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