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QSB363

Fairchild Semiconductor
Part Number QSB363
Manufacturer Fairchild Semiconductor
Description SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR
Published Apr 16, 2005
Detailed Description SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0....
Datasheet PDF File QSB363 PDF File

QSB363
QSB363

Overview
SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.
276 (7.
0) MIN 0.
087 (2.
2) 0.
071 (1.
8) 0.
024 (0.
6) 0.
016 (0.
4) 0.
074 (1.
9) 0.
019 (0.
5) 0.
012 (0.
3) .
118 (3.
0) .
102 (2.
6) .
059 (1.
5) .
051 (1.
3) 0.
055 (1.
4) SCHEMATIC COLLECTOR 0.
008 (0.
21) 0.
004 (0.
11) 0.
106 (2.
7) 0.
091 (2.
3) 0.
024 (0.
6) NOTES: 1.
Dimensions are in inches (mm).
2.
Tolerance of ± .
010 (.
25) on all non nominal dimensions unless otherwise specified.
EMITTER DESCRIPTION The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.
FEATURES • NPN Silicon Phototransistor • T-3/4 (2mm) Surface Mount Package • Medium Wide Beam Angle, 24° • Black Plastic Package • Matched Emitters: QEB363 or QEB373 • Daylight Filter • Tape & Reel Option (See Tape & Reel Specifications) • Lead Form Options: Gullwing, Yoke, Z-Bend  2001 Fairchild Semiconductor Corporation DS300357 8/2/01 1 OF 5 www.
fairchildsemi.
com SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW NOTES 1.
Derate power dissipation linearly 1.
33 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
Pulse conditions: tp = 100 µs, T = 10 ms.
5.
D = 940 nm, GaAs.
ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) MIN.
TYP.
MAX.
UNITS SYMBOL Peak Sensitivity Wavelength Reception Angle Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current Saturation Voltage Rise Time Fall Time VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 µA Ee = 0.
5 mW/cm2 VCE = 5 V(5) Ee...


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