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PBYR3045PT

NXP
Part Number PBYR3045PT
Manufacturer NXP
Description Rectifier diodes schottky barrier
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, ...
Datasheet PDF File PBYR3045PT PDF File

PBYR3045PT
PBYR3045PT

Overview
Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge.
These devices can withstand reverse voltage transients and have guaranteed reverse surge capability.
The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.
PBYR3045PT series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) MAX.
35PT 35 0.
60 30 MAX.
40PT 40 0.
60 30 MAX.
45PT 45 0.
60 30 UNIT V V A PINNING - SOT93 PIN 1 2 3 tab DESCRIPTION Anode 1 (a) Cathode (k) Anode 2 (a) Cathode (k) PIN CONFIGURATION tab SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN.
-35 35 35 35 MAX.
-40 40 40 40 30 43 30 180 200 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136 ˚C Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave; δ = 0.
5; Tmb ≤ 130 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.
5; Tmb ≤ 130 ˚C t = 10 ms t = 8.
3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.
001 per diode.
Non-repetitive peak reverse tp = 100 µs current per diode.
Storage temperature Operating junction temperature -65 - 162 2 2 175 150 A2s A A ˚C ˚C 1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
August 1996 1 Rev 1.
100 Philips Semiconductors Product specification Rectifier di...


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