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PBYR3045WT

NXP
Part Number PBYR3045WT
Manufacturer NXP
Description Rectifier diodes Schottky barrier
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast...
Datasheet PDF File PBYR3045WT PDF File

PBYR3045WT
PBYR3045WT

Overview
Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR3045WT series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V a1 1 k 2 a2 3 IO(AV) = 30 A IFSM = 300 A VF ≤ 0.
6 V SOT429 (TO247) GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope.
Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR3045WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR30 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 107 ˚C square wave; δ = 0.
5; Tmb ≤ 124 ˚C square wave; δ = 0.
5; Tmb ≤ 124 ˚C t = 10 ms t = 8.
3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN.
MAX.
40WT 40 40 40 30 30 300 330 2 150 175 45WT 45 45 45 V V V A A A A A ˚C ˚C UNIT IRRM Tj Tstg THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN.
TYP.
MAX.
UNIT 45 1.
6 1.
2 K/W K/W K/W July 1998 1 Rev 1.
200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward vol...


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