DatasheetsPDF.com

PTB20077


Part Number PTB20077
Manufacturer Ericsson
Title 0.7 Watts/ 1525-1660 MHz INMARSAT RF Power Transistor
Description ...
Features ...

File Size Direct Link
Datasheet PTB20077 PDF File








Similar Ai Datasheet

PTB20074 : The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 14 watts, 1.477–1.501 GHz Class AB Characteristics 30% Collector Efficiency at 10 watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 20 Output Power (Watts) 15 200 74 LOT COD E 10 VCC = 26 V 5 ICQ = 50 mA f = 1.501 GHz 0 0 1 2 3 4 Input Power (Watts) Package 20201 Maximum Rati.

PTB20078 : The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 2.5 Watts, 1525–1660 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 4.5 Output Power (Watts) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 200 78 LO TC OD E VCC = 26 V ICQ = 20 mA f = 1.66 GHz.

PTB20079 : The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 10 Watts, 1.6–1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 16 +24V 14 +26V +22V Output Power (Watts) 12 10 8 6 4 2 0 0.00 2007 9 LOT COD E f = 1.65 GHz ICQ = 100 mA 0.50 1.00 1.50 2.00 .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)