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PTF080451

Part Number PTF080451
Manufacturer Infineon Technologies AG
Title LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallizatio...
Features

• Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
  –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stabilit...

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Datasheet PTF080451 PDF File







Similar Datasheet

PTF080451E : The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45 40 35 400 kHz .




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