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PTF080451E

Infineon Technologies AG
Part Number PTF080451E
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Published Apr 16, 2005
Detailed Description PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matc...
Datasheet PDF File PTF080451E PDF File

PTF080451E
PTF080451E

Overview
PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical EDGE performance - Average output power = 22.
5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.
8 MHz 0 Efficiency 55 50 45 40 35 400 kHz 600 kHz 30 25 20 15 10 36 38 40 42 44 46 48 50 • Modulation Spectrum (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 Drain Efficiency (%) • • • • Output Power (dBm) PTF080451E Package 30265 ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, P OUT = 22.
5 W, f = 959.
8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gps Min — — — — — Typ 2.
0 –62 –76 18 40 Max — — — — — Units % dBc dBc dB % ηD Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 of 9 Symbol Gps Min 17 40 — Typ 18 42 –32 Max — — –30 Units dB % dBc 2004-06-24 ηD IMD PTF080451 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage ...


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