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PTF180101 Datasheet PDF


Part Number PTF180101
Manufacturer Infineon Technologies AG
Title LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures...
Features
• Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR =
  –45 dBc Typical CW performance - Output power at P
  –1dB = 15 W - Efficiency = 50% Integrate...

File Size 310.60KB
Datasheet PTF180101 PDF File








Similar Ai Datasheet

PTF180101S : The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = –45 dBc Typical CW performance - Output power at P–1dB = 15 W - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power PTF180101S Package 32259 EDGE EVM Performan.




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