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PTF180101S

Part Number	PTF180101S
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
Published	Apr 16, 2005
Detailed Description	PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The...
Datasheet	PTF180101S PDF File

Overview

PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band.
Full gold metallization ensures excellent device lifetime and reliability.
Features • Typical EDGE performance - Average output power = 4.
0 W - Gain = 19.
0 dB - Efficiency = 28% - EVM = 1.
1 % Typical WCDMA performance - Average output power = 1.
8 W - Gain = 18.
0 dB - Efficiency = 20% - ACPR = –45 dBc Typical CW performance - Output power at P–1dB = 15 W - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power PTF180101S Package 32259 EDGE EVM Performance EVM and Efficiency vs.
Output Power VDD = 28 V, IDQ = 0.
18 A, f = 1989.
8 MHz 4 40 Efficiency 3 30 • EVM RMS (Average %) x • Efficiency (%) 2 20 • • • • 1 EVM 0 25 30 35 40 ...

Similar Datasheet

PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz - Infineon Technologies AG
PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz - Infineon Technologies AG

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