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Q62702-A3471

Siemens Semiconductor Group
Part Number Q62702-A3471
Manufacturer Siemens Semiconductor Group
Description Silicon Switching Diode (Switching applications High breakdown voltage)
Published Apr 16, 2005
Detailed Description BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage 4 5 3 2 1 VPW05980 ...
Datasheet PDF File Q62702-A3471 PDF File

Q62702-A3471
Q62702-A3471

Overview
BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage 4 5 3 2 1 VPW05980 Type BAW 78M Marking GDs Ordering Code Pin Configuration Q62702-A3471 Package 1 = A 2 = C 3 n.
c.
4 n.
c.
5 = C SCT-595 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, T S ≤ 110 °C Junction temperature Storage temperature Symbol Values 400 400 1 1 10 1 150 - 65 .
.
.
+150 Unit V A VR VRM IF I FM I FS Ptot Tj T stg W °C Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 95 ≤ 40 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.
5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jul-27-1998 1998-11-01 BAW 78M Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Breakdown voltage Symbol min.
Values typ.
max.
V Unit V(BR) VF 400 I (BR) = 100 µA Forward voltage IF = 1 A IF = 2 A Reverse current - - 1.
6 2 1 50 µA IR IR - VR = 400 V Reverse current VR = 400 V, T A = 150 °C AC characteristics Diode capacitance CD trr - 10 1 - pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω, measured at IR = 20mA Test circuit for reverse recovery time DUT tr 10% tp t ΙF t rr t ΙF Oscillograph 90% Ι R = 20 mA EHN00020 VR Pulse generator: tp = 100ns, D = 0.
05, t r = 0.
6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.
35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Jul-27-1998 1998-11-01 BAW 78M Forward current IF = f (TA*;TS) * Package mounted on epoxy 1200 mA TS 800 IF TA 600 400 200 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 2 K/W IFmax / IFDC - RthJS 10 1 10 1 10 0 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 10 0 -6 10 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 10 -1 -6 10 10 -5 10 -4 ...


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