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Q62702-A3473

Siemens Semiconductor Group
Part Number Q62702-A3473
Manufacturer Siemens Semiconductor Group
Description NPN Silicon AF Transistor
Published Apr 16, 2005
Detailed Description SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary ...
Datasheet PDF File Q62702-A3473 PDF File

Q62702-A3473
Q62702-A3473

Overview
SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA 06M Marking Ordering Code Pin Configuration s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.
c.
5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 95 °C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65.
.
.
+150 W °C mA A mA Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤110 ≤55 K/W 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-08-1998 1998-11-01 SMBTA 06M Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage typ.
max.
100 20 100 Unit V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO hFE 80 80 4 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 80 V, I E = 0 Collector cutoff current V nA µA nA - VCB = 80 V, I E = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, I B = 0 DC current gain 1) I C = 10 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation voltage1) 100 100 - 0.
25 1.
2 V V VCEsat VBE(ON) - I C = 100 mA, IB = 10 mA Base-emitter voltage 1) I C = 100 mA, V CE = 1 V AC Characteristics Transition frequency fT Ccb - 100 5 - MHz pF IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Jun-08-1998 1998-11-01 SMBTA 06M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 1200 mW T...


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