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Q62702-B0911

Siemens Semiconductor Group
Part Number Q62702-B0911
Manufacturer Siemens Semiconductor Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Published Apr 16, 2005
Detailed Description BBY 55-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series in...
Datasheet PDF File Q62702-B0911 PDF File

Q62702-B0911
Q62702-B0911

Overview
BBY 55-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread 2 1 VPS05176 Type BBY 55-03W Marking Ordering Code 7 white Q62702-B0911 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 16 20 -55 .
.
.
+150 -55 .
.
.
+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Apr-30-1998 1998-11-01 BBY 55-03W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current Symbol min.
Values typ.
max.
3 100 nA Unit IR IR - VR = 15 V Reverse current VR = 15 V, TA = 65 °C AC characteristics Diode capacitance CT 14 10 5.
5 15 11 6 2.
5 0.
15 0.
09 0.
6 16 12 6.
5 3 0.
35 - pF VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-11-01 BBY 55-03W Diode capacitance CT = f (V R) f = 1MHz 30 pF 24 CT 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 V VR 15 Semiconductor Group Semiconductor Group 33 Apr-30-1998 1998-11-01 ...


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