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Q62702-B0913

Siemens Semiconductor Group
Part Number Q62702-B0913
Manufacturer Siemens Semiconductor Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Published Apr 16, 2005
Detailed Description BBY 55-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series in...
Datasheet PDF File Q62702-B0913 PDF File

Q62702-B0913
Q62702-B0913

Overview
BBY 55-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread 2 1 VES05991 Type BBY 55-02W Marking Ordering Code 7 Q62702-B0913 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 16 20 -55 .
.
.
+150 -55 .
.
.
+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Apr-30-1998 1998-11-01 BBY 55-02W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current Symbol min.
Values typ.
max.
3 100 nA Unit IR IR - VR = 15 V Reverse current VR = 15 V, TA = 65 °C AC characteristics Diode capacitance CT 14 10 5.
5 15 11 6 2.
5 0.
15 0.
09 0.
6 16 12 6.
5 3 0.
35 - pF VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, ...


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