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Q62702-C1612

Part Number	Q62702-C1612
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon AF Transistors (For general AF applications High current gain)
Published	Apr 16, 2005
Detailed Description	NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter satur...
Datasheet	Q62702-C1612 PDF File

Overview

NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H Marking EAs EBs ECs EFs EGs EHs Ordering Code (tape and reel) Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 5.
91 BCW 65 BCW 66 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 65 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 60 5 Values BCW 66 45 75 5 800 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCW 65 BCW 66 BCW 65 BCW 66 IEB0 hFE 35 50 80 75 110 180 100 160 250 35 60 100 – – – – – – 160 250 350 – – – – – – – – – 250 400 630 – – – V(BR)CE0 32 45 V(BR)CB0 60 75 V(BR)EB0 ICB0 – – – – – – – – – – 20 20 20 20 20 nA nA µA µA nA – 5 – – – – – – – – – – V Values typ.
max.
Unit Emitter-base cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 10 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 10 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BC...

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