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Q62702-C1681

Part Number	Q62702-C1681
Manufacturer	Siemens Semiconductor Group
Description	PNP Silicon AF Transistors (For general AF applications High current gain)
Published	Apr 16, 2005
Detailed Description	PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter satur...
Datasheet	Q62702-C1681 PDF File

Overview

PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H Marking DAs DBs DCs DFs DGs DHs Ordering Code (tape and reel) Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 5.
91 BCW 67 BCW 68 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 67 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 45 5 Values BCW 68 45 60 5 800 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BCW 67 BCW 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 67 BCW 68 Collector-base breakdown voltage IC = 10 µA BCW 67 BCW 68 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCW 67 BCW 68 BCW 67 BCW 68 IEB0 hFE 35 50 80 75 120 180 100 160 250 35 60 100 – – – – – – 160 250 350 – – – – – – – – – 250 400 630 – – – V(BR)CE0 32 45 V(BR)CB0 45 60 V(BR)EB0 ICB0 – – – – – – – – – – 20 20 20 20 20 nA nA µA µA nA – 5 – – – – – – – – – – V Values typ.
max.
Unit Emitter-base cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 10 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BCW 68 H IC = 10 mA, VCE = 1 V BCW 67 A, BCW 68 F BCW 67 B, BCW 68 G BCW 67 C, BC...

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