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BTS129

Siemens Semiconductor Group
Part Number BTS129
Manufacturer Siemens Semiconductor Group
Description MOSFET
Published Apr 17, 2005
Detailed Description TEMPFET® BTS 129 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The dra...
Datasheet PDF File BTS129 PDF File

BTS129
BTS129

Overview
TEMPFET® BTS 129 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 129 VDS 60 V ID 27 A RDS(on) 0.
05 Ω Package TO-220AB Ordering Code C67078-A5013-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source peak voltage, aperiodic Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 27 7.
5 108 80 1200 75 – 55 .
.
.
+ 150 E 55/150/56 K/W ≤ 1.
67 ≤ 75 °C – W A Unit V VDS VDGR Vgs ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 .
.
.
+ 150 °C Short circuit dissipation, Tj = – 55 .
.
.
+ 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.
97 BTS 129 Electrical Characteristics at Tj = 25 °C, unless otherwise specified.
Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.
25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 °C Tj = 150 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =17 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 17 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ.
max.
Unit V(BR)DSS 60 – 3.
0 – 3.
5 V VGS(th) 2.
5 I DSS – – 1 100 10 300 µA I GSS – – 10 2 0.
04 100 4 0.
05 nA µA Ω – RDS(on) gfs 8.
0 13.
0 940 500 180 25 60 100 75 18.
0 S pF 700 1250 750 270 40 90 130 95 ns Ciss Coss – Crss – – – – – Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V,...


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