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BUH515

ST Microelectronics
Part Number BUH515
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ® BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACK...
Datasheet PDF File BUH515 PDF File

BUH515
BUH515

Overview
® BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s HIGH VOLTAGE CAPABILITY U.
L.
RECOGNISED ISOWATT218 PACKAGE (U.
L.
FILE # E81734 (N)).
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS s SWITCH MODE POWER SUPPLIES 1 3 2 DESCRIPTION The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max.
Operating Junction Temperature o Value 1500 700 10 8 12 5 8 50 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 November 1999 BUH515 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.
5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 C o Min.
Typ .
Max.
0.
2 2 100 Un it mA mA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time I E = 10 mA IC = 5 A IC = 5 A IC = 5 A IC = 5 A I B = 1.
25 A I B = 1.
25 A V CE = 5 V V CE = 5 V 10 1.
5 1.
3 6 4 2.
7 190 2.
3 350 12 V V V T j = 100 oC ts tf ts tf V CC = 400 V I B1 = 1.
25 A IC = 5 A I B1 = 1.
25 A IC = 5 A IB2 = 2.
5 A 3.
9 280 µs ns µs ns f = 15625 Hz IB...


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