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BUH515D

ST Microelectronics
Part Number BUH515D
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ® BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLT...
Datasheet PDF File BUH515D PDF File

BUH515D
BUH515D

Overview
® BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.
L.
RECOGNISED ISOWATT218 PACKAGE (U.
L.
FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 2 1 APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218 INTERNAL SCHEMATIC DIAGRAM R Typ.
= 12 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max.
Operating Junction Temperature o Value 1500 700 5 8 15 5 8 50 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 November 1999 BUH515D THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.
5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1300 V V CE = 1500 V V CE = 1500 V V EB = 5 V IC = 5 A IC = 5 A IC = 5 A IC = 5 A I B = 1.
25 A I B = 1.
25 A V CE = 5 V V CE = 5 V 5 3 2.
4 170 3.
5 450 Min.
Typ .
Max.
10 0.
2 2 200 1.
5 1.
3 10 Un it µA mA mA mA V V T j = 125 oC I EBO V CE(sat )∗ V BE(s at)∗ h F E∗ T j = 100 oC ts tf ts tf V CC = 400 V I B1 = 1.
5 A IC = 5 A I B1 = 1.
25 A IC = 5 A I B2 = -2.
5 A 3.
6 260 µs ns µs ns f = 15625 Hz IB2 = -2.
5 A π  V c eflybac k = 1050 sin  106 t ...


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