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UP04315

Panasonic Semiconductor
Part Number UP04315
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type
Published Apr 17, 2005
Detailed Description Composite Transistors UP04315 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switc...
Datasheet PDF File UP04315 PDF File

UP04315
UP04315

Overview
Composite Transistors UP04315 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits 6 (0.
30) 5 4 0.
20+0.
05 –0.
02 Unit: mm 0.
10±0.
02 1.
20±0.
05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 125 125 −55 to +125 Unit V V mA V V mA mW °C °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.
02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: CB Internal Connection 6 Tr1 Tr2 1 2 3 5 4 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.
3 mA VCC = 5 V, VB = 0.
5 V, RL = 1 kΩ VCC = 5 V, VB = 2.
5 V, RL = 1 kΩ −30% 10 150 4.
9 0.
2 +30% 160 Min 50 50 0.
1 0.
5 0.
01 460 0.
25 Typ Max Unit V V µA µA mA  V V V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.
10 max.
• UNR2215 + UNR2115 5˚ 0.
55±0.
05 ■ Basic Part Number Display at No.
1 lead (0.
20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area...


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