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UP04314

Panasonic Semiconductor
Part Number UP04314
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Transistor
Published Oct 13, 2005
Detailed Description Composite Transistors UP04314 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switc...
Datasheet PDF File UP04314 PDF File

UP04314
UP04314


Overview
Composite Transistors UP04314 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits 6 (0.
30) 5 4 1.
20±0.
05 1.
60±0.
05 0.
20+0.
05 –0.
02 Unit: mm 0.
10±0.
02 ■ Basic Part Number • UNR2214 + UNR2114 Display at No.
1 lead 0.
55±0.
05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 125 125 −55 to +125 Unit V V mA V V mA mW °C °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.
02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: CA Internal Connection 6 Tr1 Tr2 1 2 3 5 4 0.
10 max.
5˚ (0.
20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.
50)(0.
50) 1.
00±0.
05 1.
60±0.
05 5˚ (0.
20) ■ Features Publication date: December 2003 SJJ00240BED 1 UP04314 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.
3 mA VCC = 5 V, VB = 0.
5 V, RL = 1 kΩ VCC = 5 V, VB = 2.
5 V, RL = 1 kΩ −30% 0.
17 10 0.
21 150 4.
9 ...


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