DatasheetsPDF.com

APT10M09B2VFR

Advanced Power Technology
Part Number APT10M09B2VFR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10M09B2VFR APT10M09LVFR POWER MOS V ® FREDFET B2VFR 100V 100A 0.009W Power MOS V® is a new generation of high volta...
Datasheet PDF File APT10M09B2VFR PDF File

APT10M09B2VFR
APT10M09B2VFR

Overview
APT10M09B2VFR APT10M09LVFR POWER MOS V ® FREDFET B2VFR 100V 100A 0.
009W Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™ TO-264 LVFR • Identical Specifications: T-MAX™ or TO-264 Package • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter D G S • Faster Switching • 100% Avalanche Tested All Ratings: TC = 25°C unless otherwise specified.
APT10M09 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)