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APT10M09B2VR

Advanced Power Technology
Part Number APT10M09B2VR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel...
Datasheet PDF File APT10M09B2VR PDF File

APT10M09B2VR
APT10M09B2VR

Overview
APT10M09B2VR APT10M09LVR 100V 100A 0.
009W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™ TO-264 LVR • Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter D G S • 100% Avalanche Tested All Ratings: TC = 25°C unless otherwise specified.
APT10M09 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pu...


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