DatasheetsPDF.com

HZU6.2Z

Hitachi
Part Number HZU6.2Z
Manufacturer Hitachi
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Published Apr 23, 2005
Detailed Description HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Oct. 1997 Features • Low capacitance...
Datasheet PDF File HZU6.2Z PDF File

HZU6.2Z
HZU6.2Z

Overview
HZU6.
2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Oct.
1997 Features • Low capacitance (C=8.
5pF max) and can protect ESD of signal line.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information Type No.
HZU6.
2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1.
Cathode 2.
Anode HZU6.
2Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1.
Two device total, See Fig.
2.
Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.
90 — — — Typ — — 8.
0 — Max 6.
50 3 8.
5 60 Unit V µA pF Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.
5V VR = 0V, f = 1 MHz I Z = 5 mA 2 HZU6.
2Z Main Characteristic 10 -2 250 Polyimide board 20hx15wx0.
8t Power Dissipation Pd (mW) (A) 10 -3 200 3.
0 1.
5 Iz 150 1.
5 unit: mm ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)