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K4E170811D

Samsung
Part Number K4E170811D
Manufacturer Samsung
Description 2M x 8Bit CMOS Dynamic RAM
Published Apr 25, 2005
Detailed Description K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION ...
Datasheet PDF File K4E170811D PDF File

K4E170811D
K4E170811D

Overview
K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.
0V or +3.
3V), refresh cycle (2K Ref.
or 4K Ref.
), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as graphic memory unit for microcomputer and personal computer.
FEATURES • Part Identification - K4E170811D-B(F) (5V, 4K Ref.
) - K4E160811D-B(F) (5V, 2K Ref.
) - K4E170812D-B(F) (3.
3V, 4K Ref.
) - K4E160812D-B(F) (3.
3V, 2K Ref.
) • Active Power Dissipation Unit : mW Speed 4K -50 -60 324 288 3.
3V 2K 396 360 4K 495 440 5V 2K 605 550 • Extended Data Out Mode operation (Fast page mode with Extended Data Out) • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • TTL(5V)/LVTTL(3.
3V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • Single +5V±10% power supply (5V product) • Single +3.
3V±0.
3V power supply (3.
3V product) • Refresh Cycles Part NO.
K4E170811D K4E170812D K4E160811D K4E160812D VCC 5V 3.
3V 5V 3.
3V 2K 32ms Refresh cycle 4K Refresh period Normal 64ms 128ms L-ver RAS CAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Data in Refresh Timer Refresh Control Refresh Counter Memory Array 2,097,152 x8 Cells Row Decoder...


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