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K4E170812D

Samsung
Part Number K4E170812D
Manufacturer Samsung
Description 2M x 8Bit CMOS Dynamic RAM
Published Apr 25, 2005
Detailed Description K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION ...
Datasheet PDF File K4E170812D PDF File

K4E170812D
K4E170812D

Overview
K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.
0V or +3.
3V), refresh cycle (2K Ref.
or 4K Ref.
), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as graphic memory unit for microcomputer and personal computer.
FEATURES • Part Identification - K4E170811D-B(F) (5V, 4K Ref.
) - K4E160811D-B(F) (5V, ...


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