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LS5912

Part Number	LS5912
Manufacturer	Linear Integrated Systems
Description	IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
Published	Apr 25, 2005
Detailed Description	LS5911 LS5912 LS5912C Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N59...
Datasheet	LS5912 PDF File

Overview

LS5911 LS5912 LS5912C Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -25V -25V 50mA 500mW S1 D1 SS G1 1 2 3 4 IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET TO-71 BOTTOM VIEW TO-78 BOTTOM VIEW G1 D1 S1 SOT-23 TOP VIEW 1 2 3 6 5 4 gfs ≥ 4000µS 1 G1 D1 S1 2 3 5 6 S2 D2 G2 PDIP-A G1 D1 S1 2 3 5 6 S2 D2 G2 S2 D2 G2 1 7 1 7 PDIP-B 8 7 6 5 -65 to +150 °C -55 to +150 °C S1 D1 SS G1 1 2 3 4 G2 SS D2 S2 S1 D1 G1 NC 1 2 3 4 8 7 6 5 NC G2 D2 S2 SOIC-A 8 7 6 5 SOIC-B G2 SS D2 S2 S1 D1 G1 NC 1 2 3 4 8 7 6 5 NC G2 D2 S2 MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC TYP LS5911 MIN MAX LS5912 MIN MAX LS5912C MIN MAX UNIT CONDITIONS VGS1 − VGS2 ∆ VGS1 − VGS2 ∆T IDSS1 IDSS2 Differential Gate to Source Cutoff Voltage Differential Gate to Source Cutoff Voltage Change with Temperature Gate to Source Saturation Current Ratio Differential Gate Current Forward Transconductance Ratio2 Common Mode Rejection Ratio 85 10 20 0.
95 1 20 0.
95 1 0.
95 0.
95 15 40 1 20 1 0.
95 0.
95 40 40 1 20 1 mV µV/°C % nA % dB VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = -55 to +125°C VDS = 10V, VGS = 0V VDG = 10V, ID = 5mA TA = +125°C VDS = 10V, ID = 5mA f = 1kHz VDG = 5V to 10V ID = 5mA IG1 − IG2 gfs1 gfs2 CMRR STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM.
BVGSS VGS(off) VGS(F) VGS IDSS IGSS IG CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Gate to Source Voltage Drain to Source Saturation Current3 Gate Leakage Current Gate Operating Current -...

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