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M68732

Mitsubishi
Part Number M68732
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWI...
Datasheet PDF File M68732 PDF File

M68732
M68732

Overview
MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.
5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 1 5 1 2 3 4 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω Ratings 9.
2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test condit...


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