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M68732

Mitsubishi
Part Number M68732
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWI...
Datasheet PDF File M68732 PDF File

M68732
M68732

Overview
MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.
5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 1 5 1 2 3 4 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω Ratings 9.
2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 520 6.
5 35 Max 530 Unit MHz W % dBc - VDD=7.
2V, VGG=3.
5V, Pin=50mW ZG=50Ω, VDD=4-9.
2V, Load VSWR<4:1 VDD=9.
2V, Pin=50mW, PO=6.
5W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.
5W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS.
FREQUENCY 10 VGG=3.
5V, VDD=7.
2V Pin=17dBm 8 PO 6 50 6 60 60 8 70 10 VGG=3.
5V VDD=7.
2V Pin=17dBm PO (fL) PO (fH) OUTPUT POWER, TOTAL EFFICIENCY VS.
INPUT POWER 100 80 4 ηT 40 4 ηT (fL) ηT (fH) 0 -5 0 5 10 15 40 2 ρin 30 2 20 0 20 490 500 510 520 530 540 550 560 FREQUENCY f (MHz) 0 20 INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS.
GATE VOLTAGE 10 VDD=7.
2V Pin=17dBm fL=520MHz fH=530MHz 100 14 10 8 6 PO (fL) PO (fH) ηT (fL) ηT (fH) 60 6 40 4 20 2 0 OUTPUT POWER, TOTAL EFFICIEN...


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