DatasheetsPDF.com

PHE13007

Part Number	PHE13007
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE1...
Datasheet	PHE13007 PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Emitter-Base voltage (IB = 0) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITION...

Similar Datasheet

PHE13002AU Silicon Diffused Power Transistor - NXP
PHE13003 Silicon Diffused Power Transistor - NXP
PHE13003A NPN power transistor - WeEn
PHE13003A NPN power transistor - NXP
PHE13003AU Silicon Diffused Power Transistor - NXP
PHE13003C NPN power transistor - WeEn
PHE13003C NPN power transistor - NXP
PHE13005 Silicon Diffused Power Transistor - NXP
PHE13005 Silicon diffused power transistor - WeEn
PHE13005X Silicon diffused power transistor - NXP

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)