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PHT8N06LT

NXP
Part Number PHT8N06LT
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhan...
Datasheet PDF File PHT8N06LT PDF File

PHT8N06LT
PHT8N06LT

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.
The device features very low on-state resistance and has integral zener diodes giving ESD protection.
It is intended for use in DC-DC converters and general purpose switching applications.
PHT8N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
55 7.
5 1.
8 150 80 UNIT V A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID ID IDM Ptot Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)...


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