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PHT8N06T


Part Number PHT8N06T
Manufacturer NXP
Title TrenchMOS transistor Standard level FET
Description N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy...
Features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications. PHT8N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation ...

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PHT8N06LT : N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications. PHT8N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 7.5 1.8 150 80 UNIT V A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VALUES Limiting values in .




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