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MGS05N60D

Motorola
Part Number MGS05N60D
Manufacturer Motorola
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor...
Datasheet PDF File MGS05N60D PDF File

MGS05N60D
MGS05N60D

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener.
Fast switching characteristics result in efficient operation at higher frequencies.
Built–In Free Wheeling Diode Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.
0 Watt) High Speed Eoff: Typical 6.
5 mJ @ IC = 0.
3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA C ™ Data Sheet MGS05N60D POWERLUX IGBT 0.
5 A @ 25°C 600 V • • • • E C G G E CASE 029–05 TO–226AE TO92 (1.
0 WATT) MAXIMUM RA...


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